Part Number Hot Search : 
STN2222 03D22 B57311 AD530 D2010 AC10FGML 20N60S TDA7212
Product Description
Full Text Search
 

To Download NP3100SDMCT3G Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 NP-SDMC Series High Current TSPD
The NP-SDMC series of High Current Thyristor Surge Protection Devices (TSPD) protect sensitive electronic equipment from transient overvoltage conditions. The high current withstand of these devices offer protection in extreme environments and provide a solution for GR-1089 balanced "Y" configurations. The NP-SDMC Series helps designers to comply with the various regulatory standards and recommendations including: GR-1089-CORE, IEC 61000-4-5, ITU K.20/K.21/K.45, IEC 60950, TIA-968-A, FCC Part 68, EN 60950, UL 1950.
Features
http://onsemi.com
HIGH CURRENT (200A) BIDIRECTIONAL SURFACE MOUNT THYRISTOR
T R
* * * *
Low Leakage (Transparent) High Surge Current Capabilities Precise Turn on Voltages These are Pb-Free Devices
Typical Applications
* Central Office * Rugged Modems * Bottom Element in "Y" Configurations
ELECTRICAL CHARACTERISTICS
VDRM Device
NP0720SDMCT3G NP1300SDMCT3G NP1500SDMCT3G NP1800SDMCT3G NP3100SDMCT3G
SMB JEDEC DO-214AA CASE 403C CO, 2 V, 1 MHz pF (Max)
65 65 65 65 65
V(BO) V
88 160 180 220 350
CO, 50 V, 1 MHz pF (Max)
30 30 30 30 30
MARKING DIAGRAM
AYWW xxxDMG G = Assembly Location = Year = Work Week = Specific Device Code (NPxxx0SDMC) G = Pb-Free Package (Note: Microdot may be in either location) A Y WW xxx
V
65 120 140 170 275
G in part number indicates RoHS compliance Other protection voltages are available upon request Symmetrical Protection - Values the same in both negative and positive excursions (See V-I Curve on page 3)
ORDERING INFORMATION
Device NPxxxxSDMCT3G Package SMB (Pb-Free) Shipping 2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
August, 2009 - Rev. 0
1
Publication Order Number: NP3100SD/D
NP-SDMC Series
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol VDRM Rating Repetitive peak off-state voltage: Rated maximum (peak) continuous voltage that may be applied in the off-state conditions including all dc and repetitive alternating voltage components. NP0720SDMCT3G NP1300SDMCT3G NP1500SDMCT3G NP1800SDMCT3G NP3100SDMCT3G IPPS Nonrepetitive peak pulse current: Rated maximum value of peak impulse pulse current that may be applied. Non-repetitive peak on-state current: Rated maximum (peak) value of ac power frequency on-state surge current which may be applied for a specified time or number of ac cycles. 2x10 ms, GR-1089-CORE 10x1000 ms, GR-1089-CORE 0.0167s, 50/60 Hz, full sine wave 0.1s, 50/60 Hz, full sine wave 1000s, 50/60 Hz, full sine wave Value $65 $120 $140 $170 $275 1000 200 60 30 2.2 A A Unit V
ITSM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS TABLE (TA = 25C unless otherwise noted)
Symbol V(BO) Rating Breakover voltage: The maximum voltage across the device in or at the breakdown region. VDC = 1000 V, dv/dt = 100 V/ms NP0720SDMCT3G NP1300SDMCT3G NP1500SDMCT3G NP1800SDMCT3G NP3100SDMCT3G I(BO) IH IDRM VT dv/dt Breakover Current: The instantaneous current flowing at the breakover voltage. Holding Current: The minimum current required to maintain the device in the on-state. Off-state Current: The dc value of current that results from the application of the off-state voltage VD = 50 V VD = VDRM 150 2 5 4 5 V kV/ms Min Typ Max $88 $160 $180 $220 $350 800 mA mA mA Unit V
On-state Voltage: The voltage across the device in the on-state condition. IT = 2.2 A (pk), PW = 300 ms, DC = 2% Critical rate of rise of off-state voltage: The maximum rate of rise of voltage (below VDRM) that will not cause switching from the off-state to the on-state. Linear Ramp between 0.1 VDRM and 0.9 VDRM Critical rate of rise of on-state current: rated value of the rate of rise of current which the device can withstand without damage. Off-state Capacitance f = 1.0 MHz, Vd = 1.0 VRMS, VD = -2 Vdc
di/dt CO
500 65
A/ms pF
THERMAL CHARACTERISTICS
Symbol TSTG TJ R0JA Storage Temperature Range Operating Temperature Range Thermal Resistance: Junction-to-Ambient Per EIA/JESD51-3, PCB = FR4 3"x4.5"x0.06" Fan out in a 3x3 inch pattern, 2 oz copper track. Rating Value -65 to +150 -40 to +150 90 Unit C C C/W
http://onsemi.com
2
NP-SDMC Series
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
Symbol VDRM V(BO) IDRM I(BO) IH VT IT ITSM IPPS VD ID Parameter Repetitive Peak Off-state Voltage Breakover Voltage Off-state Current Breakover Current Holding Current On-state Voltage On-state Current Nonrepetitive Peak On-state Current Nonrepetitive Peak Impulse Current Off-state Voltage Off-state Current -I -Voltage IPPS ITSM IT IH ID On-State Region +I
I(BO) V(BO) VDRM +Voltage
VT Off-State Region
VD
IDRM
Figure 1. Voltage Current Characteristics of TSPD
Ipp - PEAK PULSE CURRENT - %Ipp
100
PEAK ON-STATE CURRENT
100
Peak Value
tr = rise time to peak value tf = decay time to half value
10
50
Half Value
1 0.1
0
1
Figure 2. Nonrepetitive On-State Current vs. Time (ITSM) Detailed Operating Description
10 100 CURRENT DURATION (s)
1000
0 tr
tf TIME (ms)
Figure 3. Nonrepetitive On-State Impulse vs. Waveform (IPPS)
The TSPD or Thyristor Surge Protection Device are specialized silicon based overvoltage protectors, used to protect sensitive electronic circuits from damaging overvoltage transient surges caused by induced lightning and powercross conditions. The TSPD protects by switching to a low on state voltage when the specified protection voltage is exceeded. This is known as a "crowbar" effect. When an overvoltage occurs, the crowbar device changes from a high-impedance to a low-impedance state. This low-impedance state then offers a path to ground, shunting unwanted surges away from the sensitive circuits. This crowbar action defines the TSPD's two states of functionality: Open Circuit and Short Circuit. Open Circuit - The TSPD must remain transparent during normal circuit operation. The device looks like an open across the two wire line.
Short Circuit - When a transient surge fault exceeds the TSPD protection voltage threshold, the devices switches on, and shorts the transient to ground, safely protecting the circuit.
+ I(OP) + Protected Equipment -
STSPD looks like an open SCircuit operates normally
V(OP) TSPD -
Normal Circuit Operation
I + (Fault) V(Fault) TSPD -
+ I(Fault) Protected Equipment -
Operation during a Fault
SFault voltage greater than Vbo occurs STSPD shorts fault to ground SAfter short duration events the O/V switches back to an open condition SWorst case (Fail/Safe) SO/V permanent short SEquipment protected
Figure 4. Normal and Fault Conditions
http://onsemi.com
3
NP-SDMC Series
The electrical characteristics of the TSPD help the user to define the protection threshold for the circuit. During the open circuit condition the device must remain transparent; this is defined by the IDRM. The IDRM should be as low as possible. The typical value is less than 5 mA. The circuit operating voltage and protection voltage must be understood and considered during circuit design. The V(BO) is the guaranteed maximum voltage that the protected circuit will see, this is also known as the protection voltage. The VDRM is the guaranteed maximum voltage that will keep the TSPD in its normal open circuit state. The TSPD V(BO) is typically a 20-30% higher than the VDRM. Based on these characteristics it is critical to choose devices which have a VDRM higher than the normal circuit operating voltage, and a V(BO) which is less than the failure threshold of the protected equipment circuit. A low on-state voltage Vt allows the TSPD to conduct large amounts of surge current (500 A) in a small package size. Once a transient surge has passed and the operating voltage and currents have dropped to their normal level the TSPD changes back to its open circuit state.
Transient Surge
TSPD's are useful in helping designers meet safety and regulatory standards in Telecom equipment including GR-1089-CORE, ITU-K.20, ITU-K.21, ITU-K.45, FCC Part 68, UL1950, and EN 60950. ON Semiconductor offers a full range of these products in the NP series product line.
DEVICE SELECTION
When selecting a TSPD use the following key selection parameters.
Off-State Voltage VDRM
Choose a TSPD that has an Off-State Voltage greater than the normal system operating voltage. The protector should not operate under these conditions: Example:
Vbat = 48 Vmax Vring = 150 Vrms = 150*1.414 = 212 V peak
VDRM should be greater than the peak value of these two components:
VDRM > 212 + 48 = 260 VDRM Breakover Voltage V(BO)
Equipment Failure Threshold TSPD Protection Voltage Upper Limit Normal System Operating Voltage
TSPD Transparent (open) TSPD Protection (short) TSPD Transparent (open)
Volts
Verify that the TSPD Breakover Voltage is a value less than the peak voltage rating of the circuit it is protecting. Example: Relay breakdown voltage, SLIC maximum voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the anticipated surge currents in testing.
Hold Current (IH)
Time
Figure 5. Protection During a Transient Surge
The Hold Current must be greater than the maximum system generated current. If it is not then the TSPD will remain in a shorted condition, even after a transient event has passed.
http://onsemi.com
4
NP-SDMC Series
TYPICAL APPLICATION
Tip Testing: Tip - Ground Ring - Ground Tip and Ring to Ground Simultaneously Ring
Surge Waveforms
100A
NP3100SCMC
100A
NP3100SCMC
NP3100SDMC
200A
Figure 6.
* 200 A 10 x 1000 ms Needed for GR-1089 * Bottom Element in "Y" Configuration
http://onsemi.com
5
NP-SDMC Series
PACKAGE DIMENSIONS
SMB CASE 403C-01 ISSUE A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
S A
D
B
C
INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220
MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59
K
P
J
H
SOLDERING FOOTPRINT*
2.261 0.089
2.743 0.108
2.159 0.085
SCALE 8:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
6
NP3100SD/D


▲Up To Search▲   

 
Price & Availability of NP3100SDMCT3G

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X